Fig. 5. Convolutional image processing using the Ag-IPS memristor crossbar array.
(A) Optical image of a 10 × 8 Ag-IPS memristor crossbar array; the device size is 2 × 2 μm2. (B) The conductance distributions correspond to the five states (HRS and LRS1 to LRS4). The four LRS states are obtained using different operation currents of 100 pA, 10 nA, 1 μA, and 100 μA. The conductance data are extracted from the I-V curves in fig. S24. (C) Cumulative probability plots of the on/off ratio in different LRS states over 80 devices in the Ag-IPS crossbar array. (D) Comparison of the convolutional image processing of edge embossment with different kennel sizes. The 10 × 8 Ag-IPS memristor crossbar array can implement 3 × 3, 5 × 5, and 7 × 7 kernels for different image processing applications. (E) Parallel convolutional image processing of four feature maps implemented by the Ag-IPS memristor crossbar array.
