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. 2022 Apr 1;8(13):eabm9845. doi: 10.1126/sciadv.abm9845

Table 2. Literature summary of organic TFTs for which operation at frequencies above 10 MHz has been reported.

Laser: laser lithography; Vertical: vertical transistor; Photo: photo lithography; Stencil: stencil lithography; e-beam: electron-beam lithography; AlN: aluminum nitride; n/a: not applicable; n/r: not reported. If the gate-to-source and gate-to-drain overlaps are not identical, the average gate-to-contact overlap is given. In references (11) and (7), on/off current ratios of 1010 are shown for TFTs with channel lengths of 6 and 8 μm, respectively.

Reference Patterning
method
Substrate Operation
frequency
(MHz)
Operation
voltage (V)
Normalized
frequency
(MHz/V)
Channel
length (μm)
Gate
overlap
(μm)
On/off
current
ratio
Subthreshold
swing
(V/decade)
(17) Laser AlN 160 40 4.0 1.2 0.17 2 × 102 10
(31) Vertical Glass 100 4 25 0.5 n/a 5 × 104 0.11
(11) Photo Glass 45 7 6.4 1.5 1 n/r n/r
(57) Vertical Glass 40 8.6 4.7 0.2 n/a n/r n/r
(12) Photo Glass 38 15 2.5 1.5 2 2 × 109 0.6
(13) Photo Glass 27.7 20 1.4 2 2.5 1 × 106 2
(18) Laser Glass 24 15 1.6 1.4 2.7 1 × 102 9
(18) Laser PEN 22 12 1.8 1.2 2.3 5 × 101 5
(7) Stencil PEN 21 3 7.0 0.6 5 1 × 109 0.066
(14) Photo Glass 20 20 1.0 2 1 n/r n/r
(22) Stencil Glass 20 20 1.0 2.5 0.5 1 × 108 0.8
(58) Vertical Glass 20 15 1.3 0.8 n/a 1 × 107 1
(19) Laser Glass 20 30 0.7 1.75 3 5 × 103 6
(15) Photo Glass 20 10 2.0 3 2.25 1 × 109 0.3
(16) Photo Glass 19 10 1.9 2 2 1 × 108 1
(20) Laser Glass 19 12 1.6 1.2 2.3 5 × 104 2
(21) Laser PEN 14.4 7 2.1 1 1.7 1 × 102 1
(13) Photo Glass 11.4 20 0.6 2 2.5 1 × 106 1
(23) Stencil PEN 10.4 3 3.5 0.85 5 1 × 108 0.07
This work e-beam Glass 12.5 2 6.2 0.2 0.1 4 × 107 0.07