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. 2024 Jan 15;11(12):2307396. doi: 10.1002/advs.202307396

Figure 3.

Figure 3

Electrical properties of HgTe CQDs superlattice and Long‐range Hot‐carrier collection. a) Schematic diagram of lateral device. b,c) electrical properties of HgTe superlattice. Output curves and transfer curves of p‐type on CQD solids from 77 to 300 K. d–f) Photocurrent mapping measured at zero bias in 1650 nm laser illumination. d) Optical image of the measured device. Scale bar, 10 µm. e) Photocurrent mapping images. f) Extracted I ph along the channel.