| passive metasurfaces
for lenses, phase shifters, polarization shifters, half-wave plates |
low optical losses |
semiconductors
such as silicon, germanium, gallium arsenide, traditional and alternative
metals, conducting oxides, fused silica, high index dielectrics such
as hafnium oxide, titanium oxide, aluminum oxide, diamond, lithium
niobate |
| CMOS compatibility |
| high mode confinement |
| beam-steering,
telecommunications, and tunable optics |
low optical losses |
ITO, AZO, CdO, MoSe2, ZnO, graphene,
MXenes, transdimensional materials |
| CMOS compatibility |
transition metal dichalcogenides
with strong excitonic resonances |
| ultrafast response |
phase change materials,
liquid crystals |
| electrical tunability |
|
| optical tunability |
|
| nonlinear optics,
including high harmonic generation |
high field enhancement |
transition
metal nitrides, epitaxial metal films, high-index dielectrics, sapphire,
magnesium oxide, epsilon-near-zero media, nonlinear dielectrics such
as lithium niobate and barium titanate |
| large laser damage threshold |
| time-varying optics,
e.g.,
time refraction and reflection, photonic time crystals |
large changes in refractive
index fast relaxation times |
transparent conducting oxides,
III−V semiconductors such as gallium phosphide |
