| DUV photolithography |
∼100
nm |
uniform replication |
expensive |
(233 and 237) |
| compatible with other CMOS
fabrication |
limited
to flat and rigid
substrate |
| highly precise alignment |
hard to control light sources |
| |
need of masks |
| nanotransfer
printing |
∼10
nm |
large-scale fabrication
on arbitrary shape |
need of molds |
(238, 240, and 241) |
| cost-effective |
limited to nanostructures
with same heights |
| enable to continuous replication |
need of substrates with
high thermal resistance (for T-nTP) |
| diverse materials |
|
| high-n resin NIL |
∼10
nm |
direct process |
highly dependent on molds |
(242 and 244) |
| large-scale fabrication
on arbitrary shape |
hard to align |
| cost-effective |
residual resist remains |
| enable to continuous replication |
poor durability |
| high resolution |
|
