Figure 8.

(a–c) I-V curves of graphene transistor devices before and after EBL. The x-axis denotes the gate voltage, while the y-axis represents the source/drain current. A notable shift from left to right indicates changes in graphene’s electronic properties post-treatment. (d) Combined IV curves for all three devices after exposure. The transition from p-type to n-type behavior suggests an increased electron concentration in the graphene. The convergence of all devices to a similar point post-exposure implies electron saturation in the graphene.