| All molecular abbreviations and their full names | |
| HSQ (T-type H-POSS) | hydrogen silsesquioxane |
| POSS | polyhedral oligomeric silsesquioxane |
| PMMA | polymethyl methacrylate |
| TMAH | tetramethylammonium hydroxide |
| AQM-HSQ | applied quantum materials-HSQ |
| PAG | photosensitive acid-producing agents |
| HMDS | hexamethyldisilazane |
| APSQ | acetylated phenylsilsesquioxane oligomer |
| MA | methacrylic acid |
| Vi-POSS | octamer half-siloxane |
| MMA | methyl methacrylate |
| PMMA-POSS | polymethyl methacrylate-POSS |
| SH-POSS | sulfhydryl functionalization-POSS |
| TMPT | trihydroxymethylpropane triacrylate |
| PS | polystyrene |
| PDMS | polydimethylsiloxane |
| TBA | tert-butyl acrylate |
| CDEOPE-POSS | octa(chlorodimethylsilylethyl)-POSS |
| AcOSty | acetyloxystyrene |
| MAdMA | methacrylic acid 2-methyl-2-ammanyl ester |
| MaIBPOSS | methyl propylene isobutyl-POSS |
| AIBN | 2,2′-azodiisobutyric nitrile |
| t-BMA | tert-butyl methacrylate |
| LER | line edge roughness |
| DSA | directed self-assembly |
| BCPs | block copolymers |
| PS-b-PMMA | polystyrene-block-polymethyl methacrylate |
| PMAPOSS-b-PTFEMA | poly(polyhedral oligomeric silsesquioxane methacrylate-block-2,2,2-trifluoroethyl methacrylate) |
| BCPs | block Copolymers |
| POSS-A | acrylate POSS |
| POSS-G | epoxy POSS |
| PS-b-PDMS | polystyrene-block-polydimethylsiloxane |
| POSS-BCPs | POSS-block copolymers |
| XRL | X-ray lithography |
| DUV-NIL | deep ultraviolet nanoimprint lithography |
| DSA | guided self-assembled lithography |
| EUV | extreme ultraviolet lithography |
| UV | ultraviolet |
| DUV | deep ultraviolet |
| EBL | electron Beam Lithography |
| NIL | nanoimprint lithography |
| UV-NIL | ultraviolet nanoimprint lithography |
| CAR | chemically amplified resist |
| T-NIL | thermal nano-imprint lithography |
| A-POSS | octa-aminopropyl POSS |
| C-POSS | octa-substituted carboxy-terminal POSS |
| SH-POSS | sulfhydryl functionalization-POSS |