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. 2024 Mar 19;16(6):846. doi: 10.3390/polym16060846
All molecular abbreviations and their full names
HSQ (T-type H-POSS) hydrogen silsesquioxane
POSS polyhedral oligomeric silsesquioxane
PMMA polymethyl methacrylate
TMAH tetramethylammonium hydroxide
AQM-HSQ applied quantum materials-HSQ
PAG photosensitive acid-producing agents
HMDS hexamethyldisilazane
APSQ acetylated phenylsilsesquioxane oligomer
MA methacrylic acid
Vi-POSS octamer half-siloxane
MMA methyl methacrylate
PMMA-POSS polymethyl methacrylate-POSS
SH-POSS sulfhydryl functionalization-POSS
TMPT trihydroxymethylpropane triacrylate
PS polystyrene
PDMS polydimethylsiloxane
TBA tert-butyl acrylate
CDEOPE-POSS octa(chlorodimethylsilylethyl)-POSS
AcOSty acetyloxystyrene
MAdMA methacrylic acid 2-methyl-2-ammanyl ester
MaIBPOSS methyl propylene isobutyl-POSS
AIBN 2,2′-azodiisobutyric nitrile
t-BMA tert-butyl methacrylate
LER line edge roughness
DSA directed self-assembly
BCPs block copolymers
PS-b-PMMA polystyrene-block-polymethyl methacrylate
PMAPOSS-b-PTFEMA poly(polyhedral oligomeric silsesquioxane methacrylate-block-2,2,2-trifluoroethyl methacrylate)
BCPs block Copolymers
POSS-A acrylate POSS
POSS-G epoxy POSS
PS-b-PDMS polystyrene-block-polydimethylsiloxane
POSS-BCPs POSS-block copolymers
XRL X-ray lithography
DUV-NIL deep ultraviolet nanoimprint lithography
DSA guided self-assembled lithography
EUV extreme ultraviolet lithography
UV ultraviolet
DUV deep ultraviolet
EBL electron Beam Lithography
NIL nanoimprint lithography
UV-NIL ultraviolet nanoimprint lithography
CAR chemically amplified resist
T-NIL thermal nano-imprint lithography
A-POSS octa-aminopropyl POSS
C-POSS octa-substituted carboxy-terminal POSS
SH-POSS sulfhydryl functionalization-POSS