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. 2024 Mar 28;16:163. doi: 10.1007/s40820-024-01378-5

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 24 — Patterned synthesis of TMC by substituting oxygen atoms with chalcogens. a Scheme of the atomic layer deposition enabled growth of large area patterned MoS₂. b STEM image showing the uniform coverage of the polycrystalline MoS₂ film. The inset shows a selective area electron diffraction pattern from the same sample which confirms the polycrystalline. c HR-STEM image of MoS₂. d-f Low magnification cross-sectional HR-STEM characterization of e WS₂/MoS₂ junction and magnified cross-sectional HR-STEM images of d WS₂ and f MoS₂ regions. Reproduced with permission [178].

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