Figure 3.

NIR photodetector performance depends on the ligand exchange method of InAs CQD. a. optical microscope image of CQD solid thin film treated with the method i) I, ii) II, and iii) III (IPT). b. Cross‐sectional image of InAs CQD photodiode device scanned by SEM. c. J‐V characteristics of InAs CQD photodiodes based on method I (black), II (yellow‐brown), and III (IPT) (brown). d. EQE spectra of CQD device at ‐1 V with method I (black), method II (yellow‐brown), and method III (IPT) (brown). e. SCLC characterization of hole‐only devices of the method I (black), II (yellow‐brown), and III (IPT) (brown). An ET ligand concentration of 0.3 M was employed for IPT process.