Figure 2.

Memristive device characteristics. Current-voltage (I–V) curves of used memristive devices (gray) and median curve (black). (a) The setting of the device to a low resistant state and (b) resetting to its high resistant state. Insets: measurements schematic of the used CMOS-integrated HfO₂-based memristive devices which are organized in a 1T-1R cell within a 64 $\times$ 64 memory array. (c) Final conductance dependence on pruning voltage (dots) and fitting curve (blue line) which describes the reset process. For the reset voltage pulse different voltage amplitudes and a constant pulse width of $\mathrm{\Delta }t=100ms$ have been used. Experimental conductance is obtained by applying the voltage pulse to the memristor with the initial conductance $G_i$. (d) The relative standard deviation of final state $D=\sigma G/G$ on voltage: experiment (blue dots) and fitting (red line)).