Skip to main content
. 2024 Apr 4;14:7969. doi: 10.1038/s41598-024-57937-8

Figure 7.

Figure 7

(a) ECCI scan describing the surface TDD, (b) 5 μm × 5 μm AFM image showing the surface morphology of the sample with co-doping of 1 × 1018 cm−3 P and 3 × 1018 cm−3 Sb and (c) cross-sectional TEM image presenting the TDs at the Ge/Si interface of the co-doped sample.