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. 2024 Apr 15;10(8):e29599. doi: 10.1016/j.heliyon.2024.e29599

Table 2.

The interface defects parameters for FASnI3 device simulation.

Parameters ETL/FASnI3 FASnI3/Graphene Graphene/HTL
Type of defect Neutral Neutral Neutral
Total density (cm−3) 2.30 × 1010 1.0 × 109 2.30 × 1010
Capture cross-section of electrons (cm2) 3.20 × 10−18 1.0 × 10−19 3.20 × 10−18
Capture cross-section of holes (cm2) 3.20 × 10−18 1.0 × 10−19 3.20 × 10−18
Reference energy (eV) 1.30 0.6 1.30