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. 2024 Apr 29;15:3622. doi: 10.1038/s41467-024-47974-2

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — a Cross-sectional low-magnification transmission electron microscopy (TEM) image of a vertical Bi₂O₂Se fin grown by ledge-guided epitaxy. b Cross-sectional high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) image showing clear steps on the surface of the substrate, where the fin nucleated. The dashed line means Bi₂O₂Se/LaAlO₃ interface. c Fast Fourier Transform (FFT) diffraction spots of (b). d Strain mapping (ɛ_xx) estimated from a filtered version of the panel (b). e High-magnification HAADF-STEM image with atomic resolution and corresponding schematic of Bi₂O₂Se/LaAlO₃ interface. The dashed line represents actual interface. f, g The binding energies and optimized structures of Bi/Se atoms (f) and Bi-O monomers (g) adsorbed at the step edge and the terrace of the LaAlO₃ substrate, respectively. h The binding energies and optimized structures of a 2D Bi₂O₂Se nucleus at the step edge and terrace, demonstrate that nucleation at the step edge is energetically favorable. ΔE is the energy difference between two nucleation sites.