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. 2024 Apr 29;15:3622. doi: 10.1038/s41467-024-47974-2

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 5 — a Top SEM image of FinFETs with single fin and two fins, respectively, which share one fin. b Transfer curves of 2D FinFETs with single fin and two fins. c Comparison of the transconductance of 2D FinFETs with single fin and two fins. The different data symbols were obtained from different devices. d Comparison of on-state current and transconductance of 2D FinFETs with different number of fins, demonstrating that multiple-channel FinFETs possess higher electrical performance. e Typical output curves of the 2D FinFETs with five fins. f Benchmarking of the gate delay of 2D multi-fin FETs versus the channel length (L_ch) with Si MOS⁵⁷, Ge MOS⁵⁸, MoS₂ FET^59–61 and WS₂ FET⁵⁹ (Part of data of MoS₂ and WS₂ are calculated from ref. ^59,60). IRDS 2017–2033 targets⁶² for high-performance (HP) transistors are also plotted.