Table 2. Lateral Actuation Strain at the Maximum Electric Breakdown (s), Dielectric Breakdown (E_b,max), and Original Film Thickness (d₀).

entry	sa [%]	sarealb [%]	voltagec [V]	d0d [μm]	Δde [μm]	Eb,maxf [V/μm]	ε′h	ΔEdens [J/g]
mix-co-Pg	5.7	11.7	2500	91	9.5	30.7	3.83	0.44
mix-co-CN	4.2	8.6	500	16	1.3	33.9	5.23	0.98
mix-co-E	5	10.2	600	36	0.4	62.4	5.24	0.5

^aLateral strain at the maximum electric breakdown.

^bAreal strain at the maximum electric breakdown.

^cVoltage at the maximum electric breakdown.

^dOriginal thickness of the thin film.

^eChange in thickness Δd = d₀ – d, considering the corresponding thickness d: d = d₀/(s + 1)².

^fExact breakdown fields of the thin film given by E_b,act = [Voltage]/d.

^gPrestrained by 100%.

^hTaken at 20 Hz.