Fig. 1. Introduction of p-type CoSb₃-based skutterudite flexible thin films.

Calculation of band structures (a) CoSb₃ (Co₄Sb₁₂), (b) Fe₃CoSb₁₂, and (c) CeFe₃CoSb₁₂. (d) Maximum operating temperatures of various flexible thermoelectric thin films^27,48–57. The inset schematic diagrams illustrate different types of films, along with a photograph of the p-type Ce-filled Fe₃CoSb₁₂ flexible thin film reported in this work. e Comparison of the normalized resistance R/R₀ (the starting resistance is represented by R₀, the resistance after 2000 repeated bending is denoted by R.) of the films prepared in this work with those reported^{13,14,52–54,56,58–67}. The minimum bending radius r in this work is 4 mm. The inset photograph illustrates the film reported in this work during bending. f Measured power density ω as a function of temperature difference ΔT at different hot-side temperature T_h and cold-side temperature T_c values between the p-type Ce-filled Fe₃CoSb₁₂ flexible thin-film-based device. The inset image presents the photographs of the thin film flexible generator and testing apparatus.