Left: Population fraction of the Cis state is plotted
as a function
of energy density state for the different occupancy determination
methods. The fluence-based first-order rate constants, k(mm2/mJ) and retrieved temperature jump values are reported
for the four different crystallographic quantification methods. Right:
(a) (0 mJ/mm2), (b) (0.10 mJ/mm2), (c) (0.53
mJ/mm2), (d) (1.78 mJ/mm2), (e) (6.74 mJ/mm2), (f) (14.43 mJ/mm2) phased electron density maps
at 1.5 rms using occupancies determined by minimization of 2Fobs – Fcalcd density with increasing energy density of the 405 nm 2 ms flashes.
A clear shift in electron density can be seen toward the photoproduct
(Cis state) as the energy density increases. The crystallographic
determinations of Cis population at zero energy density were 0.56
± 0.05 (RFree method), 0.33 ±
0.05 (Fextrapolated), 0.25 ± 0.05
(RWork), and 0.29 ± 0.05 (Fo – Fc).