Fig. 5. (a) Schematic of SF memristor operated by SF generator. (b) I–V characteristics of 3D printed SF memristor. (c) Retention test of HRS and LRS of the SF holey structure under the application of a positive bias. The resistances were read at 0.3 V. (d) Open-circuit voltage (VOC) and (e) current data recorded by SF film by applying and releasing a force of 0.1 N. (f) The short-time memory (STM) retention of the neuromorphic device based on SF 3D printed holey structure.
