Summary of the electroluminescence data of the Th-BN and DtBuCzB-based devices.
| Device | x wt [%] | λ EL a [nm] | FWHMb [nm] | V on c [V] | L max d [cd m−2] | CEmaxe [cd A−1] | PEmaxf [lm W−1] | EQEg [%] | CIE (x, y)h |
|---|---|---|---|---|---|---|---|---|---|
| A | 1.0 | 516 | 41 | 2.7 | 60 440 | 122.9 | 134.3 | 34.6/34.0/26.8 | (0.23, 0.68) |
| B | 2.0 | 520 | 42 | 2.6 | 62 050 | 112.9 | 125.2 | 32.6/31.6/26.2 | (0.25, 0.68) |
| C | 3.0 | 524 | 45 | 2.6 | 60 170 | 95.7 | 105.7 | 26.9/26.6/22.9 | (0.27, 0.67) |
| D | 1.0 | 490 | 28 | 3.3 | 17 150 | 40.2 | 35.1 | 21.9/11.1/6.9 | (0.09, 0.36) |
a
EL maximum wavelength.
b
Full width at half maximum.
c
Turn-on voltage at 1 cd m−2.
d
Maximum luminance.
e
Maximum current efficiency.
f
Maximum power efficiency.
g
Maximum external quantum efficiency and values at 100 and 1000 cd m−2.
h
Value at 100 cd m−2.