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. 2024 Jul 11;17(14):3437. doi: 10.3390/ma17143437

Figure 13.

Figure 13

Device schematic of (a) pVSBDs with p+ doping concentration of 1020 cm−3 and p- doping concentration of 1015 cm−3 [106]; (b) pVSBDs using a half-inch diamond wafer [131]; (c) pVSBDs on (113)-oriented homogeneous epitaxial boron-doped diamond substrates [130]; and (d) trench MOS barrier Schottky diodes [77].