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. 2024 Jul 11;17(14):3437. doi: 10.3390/ma17143437

Figure 18.

Figure 18

Device schematic of the diamond MOSFETs with (a) 16 nm Al2O3 gate dielectric layer and NO2 doped substrate [177]; (b) an asymmetric construction and Al2O3 gate dielectric layer [180]; (c) a LaAlO3 and Al2O3 gate dielectric layer [181]; and (d) a V2O5 and Al2O3 gate dielectric layer [182].