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. 2024 Jul 11;17(14):3437. doi: 10.3390/ma17143437

Figure 22.

Figure 22

Device schematic of U-trench diamond MOSFETs with a (a) lateral structure; (b) vertical structure [219]; (c) barrier layer formed by ion implantation; and (d) epitaxy [220]. (e) Device schematic of vertical V-trench diamond MOSFETs with a highly concentrated N-diffusion barrier layer [221].