Table 4.

Performance comparison of diamond field-effect tubes and bipolar transistors.

Device	Structural Characteristics	VTH (V)	|ID_MAX| (mA/mm)	Ion/Ioff	|BV|(V)	Ron (mΩ·cm2)	BFOM (MW/cm2)	Ref.
H-terminated MOSFETs	NO2 p-type doping	4.1	372	>107	3659	13.48	173	[177]
	ALD-Al2O3 (10 nm @ 450 °C)	1.36	388	~2 × 107	>50V	—	—	[229]
	NO2 p-type doping	3.9–4.1	680	~107	2568	7.54	874.6	[39]
	V2O5 gate dielectric layer (10 nm)	1.7	375	~107	—	16.8	—	[182]
	N-implanted region in channel	−2.5	5.4/2.7	>107	531/1600	—	—	[228]
	ALD-Al2O3 (200 nm @ 450 °C with partial C-O channel)	−2.5~−4.0	5.2~18.2	108	2021	—	—	[198]
Si-terminated MOSFETs	ALD-Al2O3 (100 nm @ 450 °C)	−5.6	311	>107	150.2	—	—	[230]
Trench MOSFETs	Vertical U-trench	17.8	210	~106	580	23	14.6	[231]
	Vertical V-trench	20.2~20.5	12,800	~107	340	3.2	31.0	[221]
	Vertical U-trench with n-implanted/n-doped epitaxial layer	23.2/23.0	234/191	~108	249/359	31/41	2/3.1	[220]
JFETs	Lateral p-n junctions	—	1.2	—	608	3.7	99.91	[223]
BJTs	On (001)	αT = 0.44, β = 0.79, diffusion length = 4.2 × 10−5 cm3 αT = 0.91, β = 10.1, diffusion length = 4.3 × 10−5 cm3						[212]
	On (111)							[232]
HBTs	p-n-p:lGaAs/GaAs/Diamond (e-b-c)	e-b:AlGaAs/GaAs n = 1.09, Ion/Ioff = 1.53 × 107 at ±1.5 V				β ≈ 1		[213]
		b-c:GaAs/diamond n = 3.67, Ion/Ioff = 3.74 × 1010 at ±5.2V