Table 5.

Comparison of different wide bandgap and ultra-wide bandgap semiconductor devices with a focus on BFOM.

	Diodes				FETs/HEMTs
	BV (kV)	Ron (mΩ·cm2)	BFOM (MW/cm2)	Ref.	BV (kV)	Ron (mΩ·cm2)	BFOM (MW/cm2)	Ref.
SiC	1.43	5.25	390	[235]	1.83	11	304.4	[236]
GaN	0.995	1.2	825	[237]	0.850	0.98	737	[238]
β-Ga2O3	8.32	5.24	1320	[239]	1.32	4.4	405	[240]
Diamond	0.7	5.89	332	[241]	2.57	7.54	874.6	[39]