Table 1.
Ref. | Method | Al Purity | Anodization Step/Solution | AAO Fabrication Time (h) | Detachment Time | Photographs of Complete Membrane | Repetition of AAO Membrane |
---|---|---|---|---|---|---|---|
[22] (Commrcial membrane) |
Chemical etching method | 99.999% | NA | NA | NA | Complete | NA |
[18] | Reverse-bias voltage method | 99.999% | two-step/Sulfuric acid | 25 | 20 min | Complete | 6 times |
[31] | Reverse-bias voltage method | 99.999% | two-step/ Sulfuric acid |
44 | 13 min | Local * | NA |
[32] | Reverse-bias voltage method | 99.999% | two-step/oxalic acid | 8–32 | 30–90 s | Local * | 5 times |
[33] | Pulse voltage method | 99.999% | two-step/oxalic acid | 28 | 3 s (1 cycle) |
Local * | NA |
[34] | Pulse voltage method | 99.99% | two-step/oxalic acid | 5 | 3 s (1 cycle) |
Local * | NA |
[35] | Pulse voltage method | 99.999% | two-step/oxalic acid | 5 | 3–60 s (1–10 cycle) |
Local * | NA |
[39] | Pulse voltage method | 99.999% | two-step/sulfuric acid | 12–20 | 3–60 s (1–10 cycle) |
Partial | NA |
[36] | Two-layer anodization method | 99.999% | three-step/sulfuric acid | 13.5 | 15 min | Complete | 10 times |
[37] | Two-layer anodization method | 99.999% | three-step/oxalic acid | 27 | 75 min | Complete | 4 times |
Ours | Short one-time potentiostatic method | Al 1050 alloy (~99.5%) | one-step/oxalic acid | 3 | 20 s | Complete | 5 times |
* SEM images only.