Table 39.
Summary of recent achievements in the field of MIM diode for THz rectennas.
| Material | Cut-Off Frequency | Thickness | JON | Asym | NL | S (V−1) | Zero Bias S (V−1) |
|---|---|---|---|---|---|---|---|
| Cu (100 nm)-CuO-Au (100 nm) (0.0045 μm2) [199] | 28.3 THz | CuO (0.7 nm) Au/Cu (100 nm) |
- | - | - | 6 | 4 |
| Ti-TiO2-Al (21,287 µm2) [205,206,207,208] | Up to 150 THz | TiO2 (9 nm) | 10−1 A/cm2 | - | 6.5 | 18 | - |
| Ti-TiO2-Pt (21,287 µm2) [205,206,207,208] | Up to 150 THz | TiO2 (9 nm) | 10−0 A/cm2 | - | 15 | 15 | - |
| Nb/Nb2O5/Pt [205,206] | Up to 150 THz | Nb2O5 (15 nm) | - | 1500 | 4 | 20 | - |
| Nb/Nb2O5/Cu [205,206]] | Up to 150 THz | Nb2O5 (15 nm) | - | 1500 | 8 | 20 | - |
| Nb/Nb2O5/Ag [205,206] | Up to 150 THz | Nb2O5 (15 nm) | - | 1500 | 8 | 20 | - |
| Nb/Nb2O5/Au [205,206] | Up to 150 THz | Nb2O5 (15 nm) | - | 1500 | 8 | 20 | - |
| Au/Al2O3/Pt [205,206,207,208,209,210] | Up to 28.3 THz | Al2O3 (1.4 nm) Au/Pt (100 nm) |
- | - | 6 | - | 10 |
| Ni-NiO-Ag (3.1 × 10−4 µm2) [211] | Up to 343 THz | NiO (6 nm) | - | 5 | 3 | 8.5 | 5.8 |
| Pt-SiCl3-(CH2)17-CH3 -Ti (100 μm2) [212] | Up to 150 THz | SiCl3-(CH2)17-CH3 (2.23 nm) | - | 117.8 | 6.8 | 20.8 | 8.0 |
| Nb/TiO2/Pt [213] | Up to 30 THz | TiO2 (13 nm) | - | 80 | 3.5 | - | - |
| Nb/Nb2O5/Ni [213] | Up to 150 THz | Nb2O5 (15 nm) Nb/Ni (90–100 nm) |
1 × 10−10 A/cm2 | 396.5 | 7.1 | 8.5 | - |
| Nb/Nb2O5 (15 nm)/Au [214] | Up to 150 THz | Nb2O5 (15 nm) Nb/Au (90–100 nm) |
- | 1430.8 | 8.0 | 7.0 | - |
| SrTiO3 (STO)/Al2O3/SrTiO3 (STO) [215] | Up to RF | - | 5 × 10−9 A/cm2 | - | - | - | - |
| Cu-CuO-Cu (2 × 2 μm2) [216] | Up to 150 THz | CuO (2 nm) Cu (100 nm) |
- | - | - | 4.497 | - |
| Pt/Al2O3/Al [217] | Up to 150 THz | Al2O3 (6 nm) Pt/Al (100 nm) | - | 110 for AP-CVD 30 for PEALD |
6 for AP-CVD 30 for PEALD |
9 for AP-CVD 22 for PEALD |
- |
| Al-Al2O3-Au [218] | Up to 60 THz | Al/Au (65 nm) | 4.0 μA/cm2 | - | - | 14.46 | - |
| Al-Al2O3-Cr [219] | Up to 28.3 THz | Al2O3 (3 nm) Al/Cr (100 nm) |
2 × 10−4 A/cm2 | - | 3.1 | - | - |