Fig. 2. Device performance of planar CsPbBr₃ devices.

a The CsPb₂Br₅ phase defects at different crystal thicknesses. The scale bars in white color are 20 μm. b The structure of CsPbBr₃ and CsPb₂Br₅. c J-V characteristics for the planar Au/CsPbBr₃/Au device (the inset is X-ray rocking curves of the CsPbBr₃ single crystal) before and after thinning (d = 1 mm). d J-V characteristics for the Au/CsPbBr₃/Sn device. e Atomic percentage vs. etching time of each element of Sn/CsPbBr₃. f X-ray photoelectron spectroscopy (XPS) with an etching time of 396 s. g Pb 4 f XPS spectra at the interface. h Temperature dependence response of the Au/CsPbBr₃/Sn device from 270 K – 350 K. (The inset is the comparison of leakage current between CsPbBr₃ and CdZnTe at different temperatures with the same electric field of 1000 V cm⁻¹).