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. 2024 Jul 2;19(7):941–947. doi: 10.1038/s41565-024-01717-y

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© The Author(s) 2024

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a, Device schematic representing a fully encapsulated few-layer InSe channel, with graphene electrodes. One of the electrodes is contacted on both sides with gold contacts to perform measurements of graphene, affected by InSe. The scanning photocurrent maps are performed at 100 mK, with 50 µW laser power and an out-of-plane magnetic field of 1 T, unless specified otherwise. b, Electron transport characteristics of a typical few-layer InSe device, in this case 3L InSe, performed at a low temperature under 50 mV of bias. c, Optical micrograph of a 3L InSe device with graphene electrodes. An examplary measurement of the photo-Nernst effect at 1 T measured on graphene is shown overlapped with the region of interest. d, Linear magnetic-field dependence of the Nernst effect when the illumination is on graphene alone (dark yellow) and Gr/InSe (dark red). The inset shows the power dependence of the Nernst effect on Gr and sign change for an opposite magnetic field, confirming the origin of the effect as the photoinduced Nernst effect (PNE).