Fig. 4. Thermoelectric benchmarking.

a, Benchmarking of the field-effect two-terminal electron mobility and on/off ratio of InSe-based devices as recently reported in refs. ^{28,45,51–57} and refs. ^58,59, respectively. Each point is labelled by the thickness of the InSe channel. The values measured in this work refer to the lateral electron transport and are indicated with red stars, showing a substantial improvement in both on/off ratio and field-effect mobility. b, Low-temperature values of the Nernst coefficient for different materials^{5,11,12,14,18,41,60–62} and geometries^63,64. In particular, bismuth is shown as yellow squares, since it possesses the best performance reported to date, to the best of our knowledge. The values measured in this work are shown as red stars. The red arrow indicates the tunability of the Nernst coefficient measured on graphene in proximity with InSe when changing the gate voltage, outperforming the bismuth counterpart. All of the values taken from the literature are displayed at 1 T, to have a meaningful comparison, since most of these materials possess high Nernst values for different ranges of magnetic field.