. 2024 Jul 29;14:17411. doi: 10.1038/s41598-024-68746-4

Table 2.

Devices’ fabrication and growth parameters.

Device	Process details	Processing laboratory	Growth laboratory
VB0747 Ref.²¹	Metal–metal (100 Å Ta/2500 Å Au) Top contact n⁺ layer was removed Dry etched Mesa size 150 µm × 1.8 mm	MIT	Sandia
G652 Ref.¹¹	Metal–metal (100 Å Ta/2500 Å Au) Top contact n⁺ layer was removed Dry etched Mesa size 150 µm × 1.23 mm	MIT	Waterloo

Device

Process details

Processing laboratory

Growth laboratory

VB0747

Ref.²¹

Metal–metal

(100 Å Ta/2500 Å Au)

Top contact n⁺ layer was removed

Dry etched

Mesa size 150 µm × 1.8 mm

MIT

Sandia

G652

Ref.¹¹

Metal–metal

(100 Å Ta/2500 Å Au)

Top contact n⁺ layer was removed

Dry etched

Mesa size 150 µm × 1.23 mm

MIT

Waterloo