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. 2024 Aug 2;10(31):eadn0560. doi: 10.1126/sciadv.adn0560

Fig. 3. Optoelectronic characteristics of vdWs photodetector linear array with blackbody as the source at room temperature.

Fig. 3.

(A) D* of one pixel as a function of wavelength at different blackbody temperatures. (B and C) Peak D* of a pixel (B) and the photodetector linear array (C) at different blackbody temperatures demonstrate the stability of the photodetector linear array. (D) Blackbody detectivity comparison of 8 by 1 BP/MoS2 vdWs photodetector linear array with other commercial room temperature IR photodetectors, including InAs (Hamamatsu, P10090-01), InAsSb array (Hamamatsu, P15742-016DS), HgCdTe (VIGO, PV-5-AF1 × 1-TO39-NW-90), and HgCdTe (VIGO, PV-5-AF0.1 × 0.1-TO39-NW-90) photodetectors. PV, photovoltaic. (E) Wavelength coverage range and pixel scale of 2D material photodetectors. UV, ultraviolet; VIS, visible; NIR, near infrared (0.75 to 1.1 μm); SIR, short-wave infrared (1 to 3 μm); MIR, mid-wave infrared (3 to 5 μm); LIR, long-wave infrared (8 to 12 μm).