EL data of O1-TRZ, S1-TRZ and S2-TRZ based devices at different doping concentrations.

Emitting layer	EL (nm)	V on (V)	L max (cd m−2)	CEa (cd A−1)	EQEa (%)	Roll-offb (%)	CIEc (x, y)
O1-TRZ (10 wt%):PPF	506	3.2	22 324	98.6/91.4/67.0	34.1/31.9/24.5	6/28	0.27, 0.50
S1-TRZ (10 wt%):PPF	506	3.2	25 376	95.2/88.3/66.4	33.3/31.2/23.6	6/29	0.27, 0.50
S2-TRZ (10 wt%):PPF	512	3.2	21 452	85.3/80.5/64.0	29.4/27.0/21.8	8/26	0.30, 0.53
O1-TRZ (20 wt%):PPF	515	3.2	85 230	90.4/78.2/57.8	40.1/39.8/35.3	0.7/12	0.29, 0.53
S1-TRZ (20 wt%):PPF	516	3.2	85 476	122.7/120.9/106.2	39.2/39.0/34.8	0.5/11	0.30, 0.54
S2-TRZ (20 wt%):PPF	519	3.2	110 267	124.7/124.0/115.3	39.6/39.5/36.9	0.2/7	0.31, 0.55

^aMaximum values at 100/1000 cd m⁻².

^bEfficiency roll-off under 100/1000 cd m⁻².

^cCIE coordinates under 6 V.