Table 1.
Comparison of the Pt/SnOx/TiN memristor in comparison to the previous devices
| No. | Structure | Switching characteristic | Switching type | Window | Operating voltage | Multi-level state | Synapse emulation | Versatile behaviors | Reference |
|---|---|---|---|---|---|---|---|---|---|
| 1 | Ag/HfO2/Pt | Unipolar | Digital | >10,000 | 0.5 V | X | O | X | Abbas et al.38 |
| 2 | Au/CSPbBr3/ITO | Bipolar | Digital | N/A | −0.5 to 0.5 V | X | O | X | Luo et al.39 |
| 3 | Ag/ZnO/Ag | Unipolar | Digital | N/A | 1 V | 6 | O | X | Chen et al.40 |
| 4 | Cr/ZnO/FTO | Bipolar | Analog | >400 | −3 to 3 V | X | O | X | Pham et al.41 |
| 5 | ITO/ZnO NPs/ITO | Bipolar | Digital | N/A | −3 to 3 V | X | O | X | Fan et al.42 |
| 6 | W/WOx/GaOx/ITO | Bipolar | Analog | N/A | −1 to 1 V | X | O | X | Liu et al.43 |
| 7 | ITO/MXene/EGaIn | Bipolar | Digital | >100 | 1.5 to −2.5 V | X | X | Edge computing, Pavlov conditioning | Thomas et al.44 |
| 8 | Pt/LCO/NiO/Pt | Bipolar | Analog | N/A | −3.5 to 3.5 V | X | O | X | Jeong et al.45 |
| 9 | Ag/FAPbI3/SnO2/ITO | Bipolar | Analog | >100 | −1.5 to 1 V | X | O | X | Lee et al.46 |
| 10 | Pt/SnOx/TiN | Unipolar | Analog | >22 | 3 V | 23 | O | Edge computing | This study |
X, no emulation of synase showccased; O, emulation of synapse shown.