Table 2.

Parameters for spiking neural network simulations.

Symbol	Description	Value
N E	Number of excitatory (E) neurons in each area	500
N I	Number of inhibitory (I) neurons in each area	125
$R_A^E$	E resting potential	−70 mV
$R_A^I$	I resting potential	−62 mV
$R_B^E$	E reversal potential	0 mV
$R_B^I$	I reversal potential	−75 mV
δθ	Slope factor	2 mV
P Conn	Connection probability between neurons	0.2
τC	Membrane time constant	20 ms
τref	Refractory period	1 ms
C	Capacitance	300 pF
τθ	Threshold time scale	30 ms
V θ	Threshold potential	−52 mV
τW	Spike-triggered adaptation time scale	150 ms
c W	Subthreshold adaptation	4 nS
b W	Adaptation current increase	0.805 pA
V upper	Upper bound potential	20 mV
V lower	Lower bound potential	−60 mV
J EE	Synaptic efficacy from E to E	0–30 pF
J EI	Synaptic efficacy from I to E	0–2,500 pF
J IE	Synaptic efficacy from E to I	0–20 pF
J II	Synaptic efficacy from I to I	0–250 pF
J Ext	Synaptic efficacy from Ext to E	1.78 pF
${\tau }_r^E$	Rise time for E synapse	7–25 ms
${\tau }_d^E$	Decay time for E synapse	12.6–45 ms
${\tau }_r^I$	Rise time for I synapse	1.5–15 ms
${\tau }_d^I$	Decay time for I synapse	6–60 ms