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. 2024 Jul 31;10(15):e35507. doi: 10.1016/j.heliyon.2024.e35507

Fig. 3.

Fig. 3

XPS depth profiling of (a) O1s, (c) Nb3d, and (e) Si2p of sample 3; fine scan XPS of (b) O1s, (d) Nb3d, and (f) Si2p in the Nb2O5/SiO2 interface of sample 3.