Figure 3.

(a) Average RT CL spectra collected from the uncapped GaN QW (d = 0 nm) in areas with varying MoS₂ thicknesses, represented by the number of MLs (n). All spectra are normalized to the peak intensity of the GaN QW emission in the region without MoS₂ (0L). Normalized integrated CL intensity as a function of MoS₂ thickness for (b) the AlGaN spacer emission and (c) the GaN QW emission. The dashed lines represent the fits assuming the same absorption is occurring in each ML-MoS₂, with the corresponding expression next to them.