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. 2024 Aug 9;17(16):3962. doi: 10.3390/ma17163962

Figure 2.

Figure 2

(a) Optical microscope images of the WS2 monolayer FET. The scale bar is 20 μm. (b) Schematic of the FET device structure with a p+-Si backgate electrode and a 50 nm SiO2 gate dielectric. (c) Id-Vg transfer curves of the monolayer WS2 FET at Vd=1 V with increasing BV doping times.