| Maximum sample size |
1000 mm (long) × 100 mm (wide) × 100 mm (thick) (with inter-lock to load sample) |
| 2000 mm (long) × 100 mm (wide) × 100 mm (thick) (load sample directly into the deposition chamber) |
| Cathodes |
Eight rectangular 254 mm × 89 mm |
| Target-to-substrate distance |
Manual motion (50–100 mm) |
| Fast shutter for each target |
Time for closing and opening <1 s |
| Bake-out system |
<150°C |
| Carrier speed range |
0.1–100 mm s−1
|
| Carrier speed accuracy at 10–50 mm s−1
|
±0.1% |
| Carrier travel range |
4200 mm |
| Sputtering chamber base pressure |
<5×10−8 mbar |
| Load lock chamber sample treatment |
Annealing (max 700°C) + UV lamp |
| DC sputter source stability |
±0.1% over 24 h |
| Process gas control capability |
Upstream and downstream |
| Process gas pressure stability |
±0.5% over 24 h |
