Figure 1.
a. Schematic of a vertically stacked van der Waals heterostructure based memristive device with graphene as bottom contact. The layered structure of the switching layer which comprises of hexagonal boron nitride (h-BN) (zoom in) allows atomic thickness level control of active layer and hence set voltage. b. I-V characteristics of memristor devices shown in a with varying thickness of h-BN. b adapted from ref. 3 © Wiley-VCH (2017).