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. Author manuscript; available in PMC: 2024 Sep 19.
Published in final edited form as: Nanotechnology. 2021 Jan 1;32(1):012002. doi: 10.1088/1361-6528/aba70f

Figure 1.

Figure 1.

a. Schematic of a vertically stacked van der Waals heterostructure based memristive device with graphene as bottom contact. The layered structure of the switching layer which comprises of hexagonal boron nitride (h-BN) (zoom in) allows atomic thickness level control of active layer and hence set voltage. b. I-V characteristics of memristor devices shown in a with varying thickness of h-BN. b adapted from ref. 3 © Wiley-VCH (2017).