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. 2024 Sep 4;24(37):11476–11481. doi: 10.1021/acs.nanolett.4c02697

Figure 1.

Figure 1

(a) Illustration of measurement setup. The LSMO device has a lateral dimension of 10 μm by 10 μm. (b) LSMO device resistance as a function of the temperature. (c) IV curve measurements at various temperatures. Vc indicates the critical voltage at 100 K.