Table 1.
Plasma etching conditions used in the present work.
| Parameter | Condition |
|---|---|
| Top RF power (W) | 900 |
| Bottom RF power (W) | 200 |
| C4F6 (Sccm) | 30 |
| Ar (Sccm) | 60 |
| O2 (Sccm) | 15 |
| Pressure (mTorr) | 10 |
| Operating time (h) | 1 |
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