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Change of film thickness of the TiAlC film as a function of plasma treatment time by (a) N2/H2 plasma (H2 %: 50%), N2 plasma, and H2 plasma and (b) FE-SEM images of TiAlC at various N2/H2 gas ratios after 10 min plasma exposure. Excitation power: 300 W, bias power: 200 W, working pressure: 4 Pa, and substrate temperature: 20 °C.
