Figure 8.

Absorbance change of the TiAlC during one cycle etching using N₂/H₂ plasma exposure for surface modification (without using bias power, B0W) and etching (using bias power, B200W) obtained from in situ ATR-FTIR for (a) one cycle at the H₂ % of 50% and (b) one cycle at various H₂ % with the wavenumber ranging from 800 to 1388.5 cm^–1. (c) The absorbance peak area was obtained by integrating the intensities over the wavenumber ranging from 800 to 1388.5 cm^–1, using a linear baseline. Excitation power: 300 W, bias power: 200 W, N₂/H₂ ratio: 50/50, working pressure: 2 Pa, and substrate temperature: 20 °C.