Table 3. Details of the ALE-like Process Conditions for N2/H2 Plasma Exposure and ATR-FTIR Results for One Cycle of Modification/Etching of TiAlC at Various H2% Ratiosa.
| H2% | process | bias power (W) | exposure time (min) | area (arb. units) | total area change (arb. units) |
|---|---|---|---|---|---|
| 20 | modification | 0 | 4.1 | 8.93 ± 0.05 | |
| etching | 200 | 1 | –13.3 ± 0.60 | 22.23 | |
| 50 | modification | 0 | 3.2 | 8.72 ± 0.12 | |
| etching | 200 | 1 | –12.73 ± 0.54 | 21.45 | |
| 75 | modification | 0 | 3.4 | 8.84 ± 0.16 | |
| etching | 200 | 1 | –12.79 ± 0.57 | 21.63 |
a
The peak area for the absorbance was integrated over the intensities in the wavenumber ranging from 800.3 to 1388.5 cm–1 with a linear base line. Excitation power: 300 W.