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. 2024 Oct 10;14:23697. doi: 10.1038/s41598-024-70451-1

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© The Author(s) 2024

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Fig. 1 — Cross-section HAADF STEM images of InAs layers formed after InP annealing in the ${AsH}_{3}$ ambient at $485^{\circ} C$ and ${AsH}_{3}$ flow of $5.5 \cdot 10^{- 5} mol / \min$ during: (a) $4 s$ , (b) $30 s$ , (c) $600 s$ ; and after $30 s$ of annealing followed by additional deposition of (d) 1.14 ML and (e) 1.65 ML of InAs at V/III ratio of 5 and growth rate of 0.49 ML/s.