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. 2024 Sep 30;146(40):27405–27416. doi: 10.1021/jacs.4c06659

Figure 4.

Figure 4

(a) Schematic of the p–i–n device structure used. (b) Statistical histogram of 1.68 eV perovskite p–i–n devices parameters without additive, perovskite with 0.3 mol % BnAm additive, and perovskite with 0.3 mol % BnFAI additive (15 devices each with Me-4PACz as hole-transporting layer (HTL) and antireflective coating). (c) 30 s of maximum power point tracking efficiencies (ηMPP) of FA0.75Cs0.25Pb(I0.8Br0.2)3 champion devices for the three conditions: control, perovskite with 0.3 mol % BnAm, and perovskite with 0.3 mol % BnFAI replacing FA+. (d) 65 °C AM 1.5G aging of p–i–n devices with the 1.68 eV FA0.75Cs0.25PbI0.8Br0.2 (with Poly-TPD as HTL and encapsulated). The colored area denotes the standard deviation. The BnAm bulk condition is perovskite with 0.3 mol % additive. Devices were aged under open-circuit voltage conditions. Each data point is the average ηMPP of 6 devices for each condition. The data is normalized to show T80.