Figure 2.

Structural and electrical characteristics of MAPbI₃ PD and LNTR. a) Optical microscopy image of a DAVAN device, consisting of one MAPbI₃ PD and two Li‐NTR (LNTR and CNTR). The MAPbI₃ film is patterned on a designed circuit (scale bar: 100 µm). b) Circuit and c) schematic cross‐sectional structure of a DAVAN device. d) Cross‐sectional HR‐TEM image and corresponding EDS line scan profiles of O (red), Ti (blue), and In (green) obtained from the IZO channel of Li‐NTR (scale bar: 10 nm) (i), enlarged IZO area (scale bar: 2 nm) (ii), and an FFT image of the amorphous IZO channel (iii). e) Cross‐sectional HR‐TEM image and the EDS line scan profiles of F (red), Pb (blue), and I (green) from the MAPbI₃ PD (scale bar: 100 nm) (i), enlarged MAPbI₃ area (scale bar: 2 nm) (ii), and the FFT image of the crystalline MAPbI₃ active area (iii). The results show that the MAPbI₃ active layer is in tetragonal phase even after 1 month of exposure to air. This means that the CYTOP polymer perfectly prevented the penetration of moisture from air. f) UV–vis absorption spectra and PL spectra of an as‐synthesized MAPbI₃ film on the glass substrate. g) The dependence of the photocurrent and detectivity on different optical power densities. h) The dark current and photocurrent of 9 pixels at different optical power densities. i) Large hysteresis I _D–V _LWC curves (solid lines) measured in sweep cycles in the range from 1 to 5 V and −1 to −5 V with a scan speed of 0.5 V s⁻¹. The gate leakage current (dashed line) also measured in a sweep cycle of −5 to 5 V. j) The EPSC responses under ten V _LWC with different pulse frequencies. The insets show the EPSC response with Δt = 4 s (left) and the current gain (A _i/A ₁) versus stimulus number (right).