Figure 5.

Simulated results for FF and V _oc of PSCs with front side illumination under different light intensities. a,c,e) –FF and b,d,f) −V _oc of the simulated devices with fixed series and shunt resistance (67.82 Ω, and 1.335 × 10⁷ Ω, respectively), and varied interface and bulk defect densities responsible for bulk and interface recombination. Here the bulk defect densities of 10²⁰ m^–3, 10²¹ m^–3, and 10²² m^–3 represent the cases of the low, medium, and high bulk recombination, respectively. The interface defect density of 5.0 × 10¹⁴ m^–3, 2.5 × 10¹⁵ m^–3, and 1.0 × 10¹⁶ m^–3 represent the cases of the low, medium, and high interface recombination respectively. g) 3D graphs of light‐intensity‐dependent FF and V _oc in the PSC with front illumination considering different levels of bulk and interface defect densities, responsible for bulk and interface recombination.