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. 2021 Nov 16;34(2):2105920. doi: 10.1002/adma.202105920

Table 1.

Parameters used in the simulation of PSCs. The parameters for holes are written in the brackets and for electrons without the brackets.

Name Unit PTAA 2C perovskite PCBM SnO2
L Thickness nm 14 535 40 45
εr Permittivity 2.67 24.1 3.75 9.86
μn(p) Mobility cm2 V–1 s–1 (0.006) 6.845 (6.845) 0.002 0.002
C n(p) Capturing rate m3 s–1 1 (1) × 10–14
N t Bulk trap density m–3 9.896 × 1021
ETL interface trap density m–2 1.259 × 1014
HTL interface trap density m–2 7.943 × 1013
Γ n(p) Auger constant m6 s–1 1.55 (1.55) × 10–40
ζ Langevin constant 5.2 × 10–5
E c(ν) Energy level eV (−5.391) −3.88 (−5.46) −3.900 −3.904
N D(A) Doping concentration m–3 (0) 5.28 × 1020 0 1022
N c(ν) Effective density of states m–3 2.5 × 1025 1.2 × 1024 2.5 × 1025 2.5 × 1025
W a Cathode work function eV (−5.288)
W c Anode work function eV −4.00
R s Series resistance Ω 67.82
R sh Shunt resistance Ω 1.335 × 107