Table 1.
Name | Unit | PTAA | 2C perovskite | PCBM | SnO2 | |
---|---|---|---|---|---|---|
L | Thickness | nm | 14 | 535 | 40 | 45 |
εr | Permittivity | 2.67 | 24.1 | 3.75 | 9.86 | |
μn(p) | Mobility | cm2 V–1 s–1 | (0.006) | 6.845 (6.845) | 0.002 | 0.002 |
C n(p) | Capturing rate | m3 s–1 | – | 1 (1) × 10–14 | – | – |
N t | Bulk trap density | m–3 | – | 9.896 × 1021 | – | – |
ETL interface trap density | m–2 | – | 1.259 × 1014 | – | – | |
HTL interface trap density | m–2 | – | 7.943 × 1013 | – | – | |
Γ n(p) | Auger constant | m6 s–1 | – | 1.55 (1.55) × 10–40 | – | – |
ζ | Langevin constant | – | 5.2 × 10–5 | – | – | |
E c(ν) | Energy level | eV | (−5.391) | −3.88 (−5.46) | −3.900 | −3.904 |
N D(A) | Doping concentration | m–3 | (0) | 5.28 × 1020 | 0 | 1022 |
N c(ν) | Effective density of states | m–3 | 2.5 × 1025 | 1.2 × 1024 | 2.5 × 1025 | 2.5 × 1025 |
W a | Cathode work function | eV | (−5.288) | |||
W c | Anode work function | eV | −4.00 | |||
R s | Series resistance | Ω | 67.82 | |||
R sh | Shunt resistance | Ω | 1.335 × 107 |