Table 1.
Defect Engineering | Catalysts | Overpotential [mV] at 10 mA cm−2 | Stability | Reference |
---|---|---|---|---|
Doping | 12Ru/MnO2 | 161 | 200 h@ 10 mA cm−2 | Lin et al.[ 28 ] |
Ir0.7W0.2Sn0.1Ox | 236 | 220 h@ 1 A cm−2 | He er al.[ 31 ] | |
Mn‐RuO2 | 158 | 10 h@ 10 mA cm−2 | Chen et al.[ 23c ] | |
Ni‐RuO2 | 214 | >200 h@ 10 mA cm−2 | Wu et al.[ 39 ] | |
Ir‐MnO2 | 218 | 650 h@ 10 mA cm−2 | Shi et al.[ 41 ] | |
Ir‐Co3O4 | 236 | 30 h@ 10 mA cm−2 | Zhu et al.[ 43 ] | |
Ir‐Co3O4‐NS‐350 | 226 | 500 h@ 10 mA cm−2 | Liu et al.[ 96 ] | |
Gd‐IrO2‐δ | 260 | 200 h@ 10 mA cm−2 | Wu et al.[ 97 ] | |
Si‐RuO2–0.1 | 226 | 800 h@ 10 mA cm−2 | Ping et al.[ 98 ] | |
In‐RuO2/G | 187 | 100 h@ 100 mA cm−2 | Wang et al.[ 99 ] | |
Vacancies | Ru0.85Zn0.15O2‐δ | 190 | 50 h@ 10 mA cm−2 | Hou et al.[ 100 ] |
Rh‐RuO2 | 161 | 700 h@ 50 mA cm−2 | Wang et al.[ 62 ] | |
3R‐IrO2 | 188 | 500 h@ 10 mA cm−2 | Fan et al.[ 63 ] | |
Ag‐Co3O4(400) | 470 | / | Yan et al.[ 65 ] | |
Mn0.73Ru0.27O2‐δ | 208 | 10 h@ 10 mA cm−2 | Wang et al.[ 101 ] | |
NC@Vo·‐RuO2/CNTs‐350 | 170 | >900 h@ 10 mA cm−2 | Yan et al.[ 22a ] | |
Edge | MEO‐GP | 270 | 320 h@ 20 mA cm−2 | Lu et al.[ 68 ] |
HCL | 330 | / | Sun et al.[ 69 ] | |
Amorphous Ir NSs | 255 | 8 h@ 10 mA cm−2 | Wu et al.[ 72 ] | |
RuO2 nanosheets | ∼ 255 | 6 h@ 10 mA cm−2 | Laha et al.[ 71 ] | |
RuCu NSs | 236 | 13.5 h@ 5 mA cm−2 | Yao et al.[ 73 ] | |
e‐H‐Na‐213 | 270 | 1300 h@ 10 mA cm−2 | Wang et al.[ 102 ] | |
Heterostructure | Ir‐MoO3 | ∼156 | 48 h@ 100 mA cm−2 | Liu et al.[ 82 ] |
Ni3S2@NiSe/NF | 206(@50 mA cm−2) | 36 h@ 10 mA cm−2 | Shaikh et al.[ 84 ] | |
Ru/RuS2 | 201 | 24 h@ 10 mA cm−2 | Zhu et al.[ 8 ] | |
RuO2‐WC NPs | 347 | 10 h@ 10 mA cm−2 | Sun et al.[ 85 ] | |
Co3O4/CeO2 | 423 | 50 h@ 10 mA cm−2 | Huang et al.[ 86 ] | |
IrO2/GCN | 276 | 4 h@ 20 mA cm−2 | Chen et al.[ 87 ] | |
IrO2@Ir/Co3O4 | 284 | 7 h@ 10 mA cm−2 | Hou et al.[ 89 ] | |
Ir/Nb2O5‐x | 218 | 105 h@ 10 mA cm−2 | Shi et al.[ 88 ] | |
H/d‐MnOx/RuO2 | 178 | 40 h@ 10 mA cm−2 | Wu et al.[ 103 ] | |
Ir‐Sn PSC | 193 | 260 h@ 20 mA cm−2 | Zheng et al.[ 104 ] | |
IrO2@TaB2 | 288 | >120 h@ 10 mA cm−2 | Wang et al.[ 105 ] | |
Defects induced strain | Li0.52RuO2 | 156 | 70 h@ 10 mA cm−2 | Qin et al.[ 92 ] |
s‐RuO2/ATO | 198 | 150 h@10 mA cm−2 | Huang et al.[ 20d ] | |
E–IrO2/Ir | 285 | 70 h@ 10 mA cm−2 | Liu et al.[ 66b ] | |
Ru1–Pt3Cu | 220 | 28 h@ 10 mA cm−2 | Yao et al.[ 44 ] | |
GB‐Ta0.1Tm0.1Ir0.8O2−δ | 198 | 500 h@ 10 mA cm−2 | Hao et al.[ 51 ] | |
Ts‐Ir/MnO2 | 198 | 100 h@ 200 mA cm−2 | Su et al.[ 106 ] | |
Sn‐RuO2 | 184 | 150 h@ 10 mA cm−2 | Xu et al.[ 107 ] | |
Defects induced amorphous structure | RuMn alloy | 239 | 720 h@ 10 mA cm−2 | An et al.[ 93 ] |
a‐RuTe2 PNRs | 245 | / | Wang et al.[ 15b ] | |
Li‐IrOx | 300 | 10 h@ 10 mA cm−2 | Gao et al.[ 95 ] | |
Am‐Ir1Ru3O8 NBs | 204 | ∼75 h@ 10 mA cm−2 | Li et al.[ 108 ] |